Abstract

Ordered arrays of GaMnAs magnetic semiconductor nanodots have been fabricated using anodic porous alumina templates as etch masks. The magnetic behavior is studied for prepared arrays with 40 nm dot diameter, 15 nm dot thickness, and 80 nm periodicity. The disklike nanodots exhibit an easy axis for fields applied in the radial direction and a hard axis in the smaller direction. In the radial direction superparamagnetism is observed with a blocking temperature of 30 K. The fabrication technique is convenient for preparing nanodot arrays of compound semiconductors that cannot be formed by self-assembly techniques.

Notes

Originally published in Journal of Applied Physics 104, 024309 (2008). DOI:10.1063/1.2955450

Keywords

gallium compounds, III-V semiconductors, magnetic semiconductors, manganese compounds, nanostructured materials, nanotechnology, semiconductor growth, superparamagnetism

Disciplines

Nanoscience and Nanotechnology | Semiconductor and Optical Materials

Publisher

American Institute of Physics

Publication Date

7-22-2008

Rights Information

© 2008 American Institute of Physics

Rights Holder

American Institute of Physics

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figure1.zip (67 kB)
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figure2.zip (2317 kB)
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figure3.zip (111 kB)
Figure 3

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