Abstract
We have investigated band structures of a series of 28 ternary half-Heusler compounds MM'X of MgAgAs type, where M=(Lu, La, Sc, Y) and M'X=(PtBi, AuPb, PdBi, PtSb, AuSn, NiBi, PdSb). Our results show that the Z₂ topological order is due to a single band inversion at the Γ point. In native states, these half-Heusler compounds are identified as being topologically nontrivial semimetals, or nontrivial metals, or trivial insulators, which can be turned into insulating thin films on suitable substrates. Our analysis reveals a straightforward relationship which connects the band inversion strength (extent of deviation from the critical point) to the atomic charge of constituents and the lattice parameter. Our findings suggest a general method for identifying Z₂ topological insulators in nonmagnetic ternary compounds.
Keywords
Topological electronic structure, Z₂, band inversion, half-Heusler topological insulators
Subject Categories
Electric insulators and insulation
Disciplines
Physics
Publisher
American Physical Society
Publication Date
9-24-2010
Rights Information
Copyright 2010 American Physical Society
Rights Holder
American Physical Society
Recommended Citation
Al-Sawai, W.; Lin, Hsin; Markiewicz, R. S.; Wray, L. A.; Xia, Y.; Xu, S. Y.; Hasan, M. Z.; and Bansil, A., "Topological electronic structure in half-Heusler topological insulators" (2010). Physics Faculty Publications. Paper 434.
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Notes
Originally published in Physical Review B v.82 (2010): 125208. DOI: 10.1103/PhysRevB.82.125208