Abstract
We show that the strongly spin-orbit coupled materials Bi₂Te₃ and Sb₂Te₃ and their derivatives belong to the Z₂ topological-insulator class. Using a combination of first-principles theoretical calculations and photoemission spectroscopy, we directly show that Bi₂Te₃ is a large spin-orbit-induced indirect bulk band gap (δ∼150 meV) semiconductor whose surface is characterized by a single topological spin-Dirac cone. The electronic structure of self-doped Sb₂Te₃ exhibits similar Z₂ topological properties. We demonstrate that the dynamics of spin-Dirac fermions can be controlled through systematic Mn doping, making these materials classes potentially suitable for topological device applications.
Keywords
first principles theoretical calculations, Mn doping, single Dirac cone topological insulator state, Bi2Te3, Sb2Te3 s
Subject Categories
Photoemission, Spectrum analysis, Fermions
Disciplines
Physics
Publisher
American Physical Society
Publication Date
9-28-2009
Rights Information
Copyright 2009 American Physical Society.
Rights Holder
American Physical Society
Recommended Citation
Hsieh, D.; Xia, Y.; Qian, D.; Wray, L.; Meier, F.; Dill, J. H.; Osterwalder, J.; Patthey, L.; Fedorov, A. V.; Lin, H.; Bansil, A.; Grauer, D.; Hor, Y. S.; Cava, R. J.; and Hasan, M. Z., "Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3" (2009). Physics Faculty Publications. Paper 407.
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Notes
Originally published in Physical Review Letters v.103 (2009): 146401. DOI: 10.1103/PhysRevLett.103.146401