Alternate Title
Large low field magnetoresistance in La0.67Sr0.33MnO₃ nanowire devices
Abstract
Large low field magnetoresistance (LFMR) of about 28% is observed in La0.67Sr0.33MnO3 nanowires with 80 nm in diameter at T = 300 K. A gradual decrease in the LFMR has been found with increase in wire diameter. The LFMR drops to zero for wires above 280 nm in diameter. The nanowires are grown by means of electrospinning process and exhibit distorted orthorhombic crystal structure. The large LFMR is considered as a grain boundary effect as observed in several perovskite systems. The large LFMR observed in these manganites with reduced dimensions may be useful for room temperature device applications.
Keywords
magnetoresistance, nanofabrication
Subject Categories
Electrospinning, Grain boundaries, Lanthanum compounds, Nanowires, Strontium compounds
Disciplines
Physics
Publisher
American Institute of Physics
Publication Date
1-10-2011
Rights Information
© 2011 American Institute of Physics
Rights Holder
American Institute of Physics
Permanent URL
Recommended Citation
Jugdersuren, Battogtokh; Kang, Sungmu; DiPietro, Robert S.; Heiman, Don; McKeown, David; Pegg, Ian L.; and Philip, John, "Large low field magnetoresistance in La₀.₆₇Sr₀.₃₃MnO₃ nanowire devices" (2011). Physics Faculty Publications. Paper 181. http://hdl.handle.net/2047/d20001193
Click button above to open, or right-click to save.
Additional Files
fig1.zip (2420 kB)Figure 1
fig2.zip (251 kB)
Figure 2
fig3.zip (144 kB)
Figure 3
fig4.zip (117 kB)
Figure 4




Notes
Published in: J. Appl. Phys. 109, 016109 (2011); doi:10.1063/1.3493693