Abstract
Linear magnetoresistance (LMR) occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered MnAs-GaAs composite material, it is found that the magnitude of the LMR is numerically equal to the carrier mobility over a wide range and is independent of carrier density. This behavior is complementary to the Hall effect that is independent of the mobility and dependent on the carrier density. Moreover, the LMR appears to be insensitive to the details of the disorder and points to a universal explanation of classical LMR that can be applied to other material systems.
Keywords
linear magnetoresistance (LMR), MnAs-GaAs, Hall effect
Subject Categories
Semiconductors, Magnetic fields
Disciplines
Physics
Publisher
American Physical Society
Publication Date
8-10-2010
Rights Information
© 2010 The American Physical Society
Rights Holder
American Physical Society
Permanent URL
Recommended Citation
Johnson, H. G.; Bennett, S. P.; Barua, R.; Lewis, L. H.; and Heiman, D., "Universal properties of linear magnetoresistance in strongly disordered MnAs-GaAs composite semiconductors" (2010). Physics Faculty Publications. Paper 180. http://hdl.handle.net/2047/d20001191
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Notes
Published in: Physical Review B, v.82 no.8: 085202 (2010). DOI: 10.1103/PhysRevB.82.085202