Abstract
Boron-incorporated Mn5SiC nanowires were grown using chemical vapor deposition method. The nanowire cluster exhibits magnetic hysteresis loops at room temperature and the strength of the magnetic behavior depends on the concentration of the boron incorporation. Mn5SiC nanowire-based devices exhibit spin dependent transport properties which shows significant changes with boron content. Large magnetoresistance is observed in lightly boron-incorporated nanowire devices and it decreases with increase in boron content.
Keywords
doping, magnetic hysteresis, Mn-Si-C, Mn5SiC
Subject Categories
Boron, Chemical vapor deposition, Magnetoresistance, Manganese compounds, Nanowires, Silicon compounds, Nanostructures
Disciplines
Physics
Publisher
American Institute of Physics
Publication Date
5-20-2010
Rights Information
© 2010 American Institute of Physics
Rights Holder
American Institute of Physics
Permanent URL
Recommended Citation
Kang, Sungmu; Brewer, Greg A.; Jugdersuren, Battogtokh; DiPietro, Robert; Heiman, Don; Buechele, Andrew C.; McKeown, David A.; Pegg, Ian L.; and Philip, John, "Magnetotransport properties of Mn-Si-C based nanostructures" (2010). Physics Faculty Publications. Paper 178. http://hdl.handle.net/2047/d20001189
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Additional Files
fig1.zip (303 kB)Figure 1
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fig4.zip (1041 kB)
Figure 4
Notes
Published in: J. Appl. Phys. 107, 104503 (2010); doi:10.1063/1.3425780