## Physics Faculty Publications

#### Abstract

TiO$_{2-\delta}$ films were deposited on (100) Lanthanum aluminates LaAlO$_{3}$ substrates at a very low oxygen chamber pressure $P\approx 0.3$ mtorr employing a pulsed laser ablation deposition technique. In previous work, it was established that the oxygen deficiency in these films induced ferromagnetism. In this work it is demonstrated that this same oxygen deficiency also gives rise to semiconductor titanium ion impurity donor energy levels. Transport resistivity measurements in thin films of TiO$_{2-\delta}$ are presented as a function of temperature and magnetic field. Magneto- and Hall- resistivity is explained in terms of electronic excitations from the titanium ion donor levels into the conduction band.

#### Notes

Originally posted at http://arxiv.org/abs/0704.2211v1. Preprint of an article published in Journal of Physics: Condensed Matter, v.19 no.32, 2007.

#### Keywords

electronic transport, ferromagnetic semiconducting TiO$_{2-\delta}$, LaAlO$_{3}$

#### Subject Categories

Condensed matter, Ferromagnetism, Lanthanum compounds

Physics

2007

#### Permanent URL

http://hdl.handle.net/2047/d20000783

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