We show that in dilute metallic p-SiGe heterostructures, magnetic field can cause multiple quantum Hall-insulator-quantum Hall transitions. The insulating states are observed between quantum Hall states with filling factors = 1 and 2 and, for the first time, between = 2 and 3 and between = 4 and 6. The latter are in contradiction with the original global phase diagram for the quantum Hall effect. We suggest that the application of a (perpendicular) magnetic field induces insulating behaviour in metallic p-SiGe heterostructures in the same way as in Si MOSFETs. This insulator is then in competition with, and interrupted by, integer quantum Hall states leading to the multiple re-entrant transitions. The phase diagram which accounts for these transition is similar to that previously obtained in Si MOSFETs thus confirming its universal character.


Originally posted at http://arxiv.org/abs/cond-mat/0107171v1. Preprint of an article published in Physical Review B, v.64 no.16, 2001.


quantum Hall states, insulating states, strongly correlated electrons, p-SiGe heterostructures

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Quantum Hall effect, Magnetic fields



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