Abstract

We report the growth of thick barium hexaferrite (BaFe₁₂O₁₉,BaM) films on m-planes ([1100] or [1010]) sapphire (Al₂O₃) substrates by the liquid phase epitaxy deposition technique. The procedure entailed the deposition of seed layers of BaFe₁₂O₁₉ onto the substrate by the pulsed laser ablation deposition and then dipping the substrate into a molten flux for 2 h. The total thickness ranged from 60 μm to 200 μm. The vibrating sample magnetometer (VSM) measurement data showed that the film exhibited magnetic uniaxial anisotropy axis in the film plane. The coercive field was relatively small, range of Hc was from 0.007 kOe to 0.08 kOe, and the saturation magnetization (4πMs)≅4.42 kG. The ferrimagnetic resonance (FMR) linewidth (ΔH) at 59.9 GHz was ∽0.08 kOe. This value of ΔH should be contrasted with previous FMR linewidth measurement of films deposited by the PLD technique which showed a ΔH of ∽1.20 kOe.

Notes

Originally published in Journal of Applied Physics 93, 8597 (2003). DOI:10.1063/1.1557791 (http://dx.doi.org/10.1063/1.1557791).

Keywords

barium hexaferrite films, FMR, c-axis, BaFe₁₂O₁₉, BaM, m-planes, sapphire substrates, sample magnetometer measurement, VSM, microwave

Subject Categories

Ferromagnetic resonance, Magnetic properties, Liquid phase epitaxy, Thick films, Laser ablation, Anisotropy

Disciplines

Electromagnetics and photonics

Publisher

American Institute of Physics

Publication Date

5-15-2003

Rights Information

Copyright 2003 American Institute of Physics.

Rights Holder

American Institute of Physics


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