Abstract

Ferromagnetic resonance (FMR) measurements have been performed on single-crystal Fe films, produced by ion beam sputtering techniques on GaAs substrates. In-plane FMR results over the frequency range 0.1-20.0 GHz were obtained by a slot line technique. The magnetic parameters deduced from these measurements are comparable to bulk Fe. In-plane angular variation reveals a negligible uniaxial anisotropy contribution to the magnetic anisotropy energy. Spin-wave excitations were observed in 9.5-GHz cavity measurements, and are found to obey the n2 law. The exchange stiffness constant is found to be somewhat larger than seen in other epitaxial Fe films. These results show that epitaxial Fe/GaAs films possessing good magnetic properties may be produced by ion beam sputtering techniques.

Notes

Originally published in Journal of Applied Physics 63, 3802 (1988). DOI:10.1063/1.341131 (http://dx.doi.org/10.1063/1.341131).

Keywords

spin-wave excitations, ion-beam sputtered Fe films, GaAs substrates, single crystal films

Subject Categories

Ferromagnetic resonance, Spin waves, Thin films, Magnetic resonance

Disciplines

Electromagnetics and photonics

Publisher

American Institute of Physics

Publication Date

4-15-1988

Rights Information

Copyright 1988 American Institute of Physics.

Rights Holder

American Institute of Physics

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