Abstract

We have produced Feₓ-Ni₈₀₋ₓ-B₁₅-Si₅ (x= 20, 40, and 75) and permalloy thin films on a silicon substrate using ion-beam sputtering technique. Four-point probe measurement indicated that quarternary films had 3-4 times higher resistivity than permalloy films, and this ration was not changed after thermal annealing. The values of saturation magnetization were determined to be 5-13 kG depending on Fe concentration. The anisotropy fields of these films were in the ranger of 2-15 Oe after deposition, however, these values were reduced by more than 50% after annealing with field. The lowest value of the anisotropy field was 1.3 Oe for the permalloy film after thermal annealing without field.

Notes

Originally published in Journal of Applied Physics 63, 4315 (1988). DOI:10.1063/1.340213 (http://dx.doi.org/10.1063/1.340213).

Keywords

ion beam sputtering technique, FeNiBSi, Feₓ-Ni₈₀₋ₓ-B₁₅-Si₅, permalloy films, quarternary films

Subject Categories

Thin films, Magnetic properties

Disciplines

Electromagnetics and photonics

Publisher

American Institute of Physics

Publication Date

4-15-1988

Rights Information

Copyright 1988 American Institute of Physics.

Rights Holder

American Institute of Physics

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