Abstract
We have produced Feₓ-Ni₈₀₋ₓ-B₁₅-Si₅ (x= 20, 40, and 75) and permalloy thin films on a silicon substrate using ion-beam sputtering technique. Four-point probe measurement indicated that quarternary films had 3-4 times higher resistivity than permalloy films, and this ration was not changed after thermal annealing. The values of saturation magnetization were determined to be 5-13 kG depending on Fe concentration. The anisotropy fields of these films were in the ranger of 2-15 Oe after deposition, however, these values were reduced by more than 50% after annealing with field. The lowest value of the anisotropy field was 1.3 Oe for the permalloy film after thermal annealing without field.
Keywords
ion beam sputtering technique, FeNiBSi, Feₓ-Ni₈₀₋ₓ-B₁₅-Si₅, permalloy films, quarternary films
Subject Categories
Thin films, Magnetic properties
Disciplines
Electromagnetics and photonics
Publisher
American Institute of Physics
Publication Date
4-15-1988
Rights Information
Copyright 1988 American Institute of Physics.
Rights Holder
American Institute of Physics
Permanent URL
Recommended Citation
Ryu, J.; Huang, Y.; and Vittoria, C., "Magnetic-properties of ion-beam sputter-deposited FeNiBSi films" (1988). Electrical and Computer Engineering Faculty Publications. Paper 76. http://hdl.handle.net/2047/d20002247
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Notes
Originally published in Journal of Applied Physics 63, 4315 (1988). DOI:10.1063/1.340213 (http://dx.doi.org/10.1063/1.340213).