Abstract
Oriented M-type hexaferrite thin films are deposited using the alternating target laser ablation deposition (ATLAD) technique utilizing PbO and Fe₂O₃ targets. Crystallographic, dc magnetic, and microwave characterization results confirming the presence of a hexagonal PbFe₁₂O₁₉ phase are presented. We conclude that the ATLAD technique holds great promise for layer by layer deposition of various hexaferrite materials, the properties of which can be adjusted by varying the composition of the targets as well as the number of laser shots from each target during the deposition process. This would provide control over the uniaxial anisotropy fields and saturation magnetization values that was not possible in the conventional single target LAD technique.
Keywords
hexaferrites, PbFe₁₂O₁₉, Fe₂O₃, PbO, alternating target laser ablation deposition technique, ATLAD, saturation magnetization
Subject Categories
Ferromagnetism, Epitaxy, Thin films, Laser ablation, Pulsed laser deposition, Anisotropy
Disciplines
Electromagnetics and photonics
Publisher
American Institute of Physics
Publication Date
5-1-2007
Rights Information
Copyright 2007 American Institute of Physics.
Rights Holder
American Institute of Physics
Permanent URL
Recommended Citation
Geiler, A. L.; He, Y.; Yoon, S. D.; Yang, A.; Chen, Y.; Harris, V. G.; and Vittoria, C., "Epitaxial growth of PbFe₁₂O₁₉ thin films by alternating target laser ablation deposition of Fe₂O₃ and PbO" (2007). Electrical and Computer Engineering Faculty Publications. Paper 43. http://hdl.handle.net/2047/d20002214
Figure 1
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Additional Files
epitaxial_growth_fig1.zip (27 kB)Figure 1
epitaxial_growth_fig2.zip (18 kB)
Figure 2
epitaxial_growth_fig3.zip (28 kB)
Figure 3
Notes
Originally published in Journal of Applied Physics 101, 09M510 (2007). DOI:10.1063/1.2710222 (http://dx.doi.org/10.1063/1.2710222).