Title
Enhanced coercive and remanence fields for CoFe₂O₄ and BaFe₁₂O₁₉ bilayers deposited on (111) MgO
Abstract
High quality epitaxial bilayer films of spinel CoFe₂O₄ (CoF) and M-type hexagonal ferrite BaFe₁₂O₁₉ (BaM) were deposited onto (111) magnesium oxide (MgO) substrate by pulsed laser ablation deposition. X-ray diffraction patterns of both BaM/CoF and CoF/BaM films showed only (0001) BaM, (111) CoF, and (111) MgO peaks. The highest coercive field of Hc=1.4 kOe was obtained for a BaM/CoF film where the CoF layer was deposited at 400°C, which was higher than typical Hc values of ∽0.4 kOe found for single layer BaM films on (111) MgO. This was less than the Hc ∽3.0 kOe found for (111) CoF films deposited at 400 °C, probably due to in situ annealing effects during the growth of the overlying BaM film at 900°C. This Hc enhancement for BaM/CoF bilayers as compared to BaM/MgO films may provide a means to combine large coercive fields with high quality hexaferrite films.
Keywords
enhanced coercive fields, remanence fields, CoFe₂O₄, BaFe₁₂O₁₉, CoF, MgO, BaM, bilayer films, x-ray diffraction
Subject Categories
Thin films, Ferromagnetism, Pulsed laser deposition, Laser ablation
Disciplines
Electromagnetics and photonics
Publisher
American Institute of Physics
Publication Date
5-15-2002
Rights Information
Copyright 2002 American Institute of Physics.
Rights Holder
American Institute of Physics
Permanent URL
Recommended Citation
Yoon, S. D.; Oliver, S. A.; and Vittoria, C., "Enhanced coercive and remanence fields for CoFe₂O₄ and BaFe₁₂O₁₉ bilayers deposited on (111) MgO" (2002). Electrical and Computer Engineering Faculty Publications. Paper 42. http://hdl.handle.net/2047/d20002213
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Notes
Originally published in Journal of Applied Physics 91, 7379 (2002). DOI:10.1063/1.1452212 (http://dx.doi.org/10.1063/1.1452212).