Abstract

An optimized alternating target laser ablation deposition (ATLAD) technique has been developed to grow high quality barium hexaferrite (BaFe₁₂O₁₉) thin films on basal plane oriented sapphire(Al₂O₃) substrates from barium monoferrite (BaFe₂O₄) and hematite (α-Fe₂O₃) targets. Crystallographic and structural characterization results show that the films possess low c-axis dispersion of Δ ω=0.259 degrees and hexagonal terraced surface morphology. Saturation magnetization and uniaxial magnetic anisotropy field were determined to be consistent with reference data on high quality barium hexaferrite films and bulk single crystals grown by other techniques. Ferromagnetic resonance linewidth of 42 Oe was measured at 52 GHz by the shorted waveguide technique. We conclude that the ATLAD technique is capable of growing high quality barium hexaferrite films while providing unique opportunities to control the ionic distribution in the hexagonal unit cell by allowing different species of ions to be introduced from the respective targets in any order and at any time during film growth.

Notes

Originally published in Journal of Applied Physics 103, 07B914 (2008). DOI:10.1063/1.2837654 (http://dx.doi.org/10.1063/1.2837654).

Keywords

thin films, ATLAD, barium hexaferrite, barium monoferrite, BaFe₁₂O₁₉, Al₂O₃, BaFe₂O₄, α-Fe₂O₃, sapphire substrates, saturation magnetization, anisotropy

Subject Categories

Thin films, Laser ablation, Pulsed laser deposition, Magnetic properties, Hematite, Ferromagnetic resonance

Disciplines

Electromagnetics and photonics

Publisher

American Institute of Physics

Publication Date

4-1-2008

Rights Information

Copyright 2008 American Institute of Physics.

Rights Holder

American Institute of Physics



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alternating_target_laser_fig1.zip (1020 kB)
Figure 1

alternating_target_laser_fig2.zip (57 kB)
Figure 2

alternating_target_laser_fig3.zip (50 kB)
Figure 3

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