Abstract
The deposition and characterization of thick M-type barium hexaferrite (BaFe₁₂O₁₉) films produced by a modified liquid phase epitaxy deposition technique are reported. The films are deposited on (111) oriented single crystal garnet (Gd₃Ga₅O₁₂) substrates. The thickness of the films ranged between 45 and 80 μm with growth rates of up to 40 μm/h. This growth rate is about five times greater than films grown on substrates of (111) magnesium oxide. Although the films are relatively thick, the ferrimagnetic resonance linewidth is remarkably narrow.
Keywords
m-type barium hexaferrite films, single crystal garnet substrates, BaFe₁₂O₁₉
Subject Categories
Thick films, Epitaxy, Ferromagnetic resonance
Disciplines
Electromagnetics and photonics
Publisher
American Institute of Physics
Publication Date
8-18-2004
Rights Information
Copyright 2004 American Institute of Physics.
Rights Holder
American Institute of Physics
Permanent URL
Recommended Citation
Vittoria, C. and Chen, S. D., "Thick M-type barium hexaferrite films grown on garnet substrates" (2004). Electrical and Computer Engineering Faculty Publications. Paper 133. http://hdl.handle.net/2047/d20002304
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Notes
Originally published in Journal of Applied Physics 96, 2131 (2004). DOI:10.1063/1.1769597 (http://dx.doi.org/10.1063/1.1769597).