Abstract

Films consisting of Zn₁₋ₓFeₓO were prepared by alternating-target laser ablation deposition. The Fe doping levels ranged from x=0.016 to 0.125 at. %. X-ray diffraction and energy dispersive x-ray spectroscopy measurements showed only (002n) reflections of the ZnO host and confirmation of the Fe concentration, respectively. For films grown on (001) Al₂O₃ at 300 K, room temperature average saturation magnetization, < 4πMs >, measured from superconducting quantum interference device (SQUID) hysteresis loops for x=0.125 ± 0.025 was 172 G. Although SQUID measurements were sensitive to the average value of the saturation magnetization, ferrimagnetic resonance measurements appeared to be sensitive only to the saturation magnetization of the so-called magnetic layer containing ferric ions. We believe that we have produced a host semiconductor material doped with impurities of ferrimagnetic ordering.

Notes

Originally published in Journal of Applied Physics 99, 08M109 (2006). DOI:10.1063/1.2172916 (http://dx.doi.org/10.1063/1.2172916).

Keywords

semiconductors, ZnO, ferric ions, Zn₁₋ₓFeₓO, SQUID measurements, saturation magnetization

Subject Categories

Semiconductor films, Ferromagnetism, Magnetism, Iron ions, Ferromagnetic resonance

Disciplines

Electromagnetics and photonics

Publisher

American Institute of Physics

Publication Date

4-15-2006

Rights Information

Copyright 2006 American Institute of Physics.

Rights Holder

American Institute of Physics

Additional Files
room_temp_magnetism_fig1.ppt (26 kB)
Figure 1
room_temp_magnetism_fig2.ppt (26 kB)
Figure 2
room_temp_magnetism_fig3.ppt (33 kB)
Figure 3

View Full Text

Click button above to open, or right-click to save.

Additional Files

room_temp_magnetism_fig1.ppt (26 kB)
Figure 1
room_temp_magnetism_fig2.ppt (26 kB)
Figure 2
room_temp_magnetism_fig3.ppt (33 kB)
Figure 3

Share

COinS