Abstract
The properties of thin films of BaScₓFe₁₂₋ₓO₁₉ (x = 0.4) were determined by structural and magnetic measurements. Films were deposited by pulsed laser ablation deposition onto c-plane sapphire at oxygen pressures between 10 and 100 mTorr. X-ray diffraction measurements showed all films to be single-phase c-axis oriented hexaferrites with expanded c-axis lattice constants compared to x = 0 films. Magnetometry measurements showed that all films had the easy axis (c-axis) normal to the film plane, with a mean saturation magnetization value of 3.8 kG. The mean uniaxial anisotropy field value was 10.6 kOe. This ability to adjust the uniaxial anisotropy field in hexaferrite films through selective substitution will be important for future planar microwave devices.
Keywords
scandium doped barium hexaferrite films, BaScₓFe₁₂₋ₓO₁₉, x-ray diffraction measurements, magnetometry, saturation magnetization
Subject Categories
Pulsed laser deposition, Thin films, Laser ablation
Disciplines
Electromagnetics and photonics
Publisher
American Institute of Physics
Publication Date
4-15-1999
Rights Information
Copyright 1999 American Institute of Physics.
Rights Holder
American Institute of Physics
Permanent URL
Recommended Citation
Oliver, S. A.; Chen, M. L.; Vittoria, C.; and Lubitz, P., "Properties of pulsed laser deposited scandium-doped barium hexaferrite films" (1999). Electrical and Computer Engineering Faculty Publications. Paper 107. http://hdl.handle.net/2047/d20002278
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Notes
Originally published in Journal of Applied Physics 85, 4630 (1999). DOI:10.1063/1.370430 (http://dx.doi.org/10.1063/1.370430).