Abstract
Carbon nanotubes are extremely sensitive to the molecular species in the environment and hence require a proper passivation technique to isolate them against environmental variations for the realization of reliable nanoelectronic devices. In this paper, we demonstrate a parylene-C passivation approach for CNT thin film transistors fabricated on a flexible substrate. The CNT transistors are encapsulated with 1 and 3 μm thick parylene-C coatings, and the transistor characteristics are investigated before and after passivation. Our findings indicate that thin parylene-C films can be utilized as passivation layers for CNT transistors and this versatile technique can be readily applied for the encapsulation of CNT devices such as field effect transistors, p-n diodes, and logic circuits fabricated on flexible substrates.
Keywords
carbon nanotubes, encapsulation, nanotube devices, passivation, polymer films, thin film transistors
Subject Categories
Nanotubes, Nanoelectronics, Thin film transistors
Disciplines
Electronic Devices and Semiconductor Manufacturing | Nanoscience and Nanotechnology
Publisher
American Institute of Physics
Publication Date
10-13-2010
Rights Information
Copyright 2010
Rights Holder
American Institute of Physics
Permanent URL
Recommended Citation
Selvarasah, Selvapraba; Li, Xinghui; Busnaina, Ahmed A.; and Dokmeci, Mehmet R., "Parylene-C passivated carbon nanotube flexible transistors" (2010). Center for High-Rate Nanomanufacturing Publications. Paper 18. http://hdl.handle.net/2047/d20000964
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figure3.zip (277 kB)
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Included in
Electronic Devices and Semiconductor Manufacturing Commons, Nanoscience and Nanotechnology Commons
Notes
Originally published in Applied Physics Letters v.97 no.15 (2010), p.153120. doi:10.1063/1.3499758