Abstract

We have fabricated high-performance top-contact pentacene field-effect transistors using a nanometer-scale gate dielectric and parylene-C shadow masks. The high-capacitance gate dielectric, deposited by atomic layer deposition of aluminum oxide, resulted in a low operating voltage of 2.5 V. The flexible and conformal parylene-C shadow masks allowed fabrication of transistors with channel lengths of L = 5, 10, and 20 μm. The field-effect mobility of the transistors was μ = 1.14 (±0.08) cm²/V s on average, and the IMAX/IMIN ratio was greater than 10⁶.

Notes

Originally published in Applied Physics Letters v.96 no.13 (2010), p.133306. doi:10.1063/1.3336009

Keywords

aluminium compounds, atomic layer epitaxial growth, carrier mobility, masks, nanotechnology, organic field effect transistors

Subject Categories

Field-effect transistors, Organic electronics, Nanostructured materials

Disciplines

Electronic Devices and Semiconductor Manufacturing | Nanoscience and Nanotechnology

Publisher

American Institute of Physics

Publication Date

3-31-2010

Rights Information

Copyright 2010

Rights Holder

American Institute of Physics

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figure1.zip (305 kB)
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