Abstract
We have fabricated high-performance top-contact pentacene field-effect transistors using a nanometer-scale gate dielectric and parylene-C shadow masks. The high-capacitance gate dielectric, deposited by atomic layer deposition of aluminum oxide, resulted in a low operating voltage of 2.5 V. The flexible and conformal parylene-C shadow masks allowed fabrication of transistors with channel lengths of L = 5, 10, and 20 μm. The field-effect mobility of the transistors was μ = 1.14 (±0.08) cm²/V s on average, and the IMAX/IMIN ratio was greater than 10⁶.
Keywords
aluminium compounds, atomic layer epitaxial growth, carrier mobility, masks, nanotechnology, organic field effect transistors
Subject Categories
Field-effect transistors, Organic electronics, Nanostructured materials
Disciplines
Electronic Devices and Semiconductor Manufacturing | Nanoscience and Nanotechnology
Publisher
American Institute of Physics
Publication Date
3-31-2010
Rights Information
Copyright 2010
Rights Holder
American Institute of Physics
Permanent URL
Recommended Citation
Chung, Yoonyoung; Murmann, Boris; Selvarasah, Selvapraba; Dokmeci, Mehmet R.; and Bao, Zhenan, "Low-voltage and short-channel pentacene field-effect transistors with top-contact geometry using parylene-C shadow masks" (2010). Center for High-Rate Nanomanufacturing Publications. Paper 16. http://hdl.handle.net/2047/d20000962
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figure3.zip (55 kB)
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Included in
Electronic Devices and Semiconductor Manufacturing Commons, Nanoscience and Nanotechnology Commons
Notes
Originally published in Applied Physics Letters v.96 no.13 (2010), p.133306. doi:10.1063/1.3336009