Title
Parallel arrays of individually addressable single-walled carbon nanotube field-effect transistors
Abstract
High-throughput field-effect transistors (FETs) containing over 300 disentangled, high-purity chemical-vapor-deposition-grown single-walled carbon nanotube (SWNT) channels have been fabricated in a three-step process that creates more than 160 individually addressable devices on a single silicon chip. This scheme gives a 96% device yield with output currents averaging 5.4 mA and reaching up to 17 mA at a 300 mV bias. Entirely semiconducting FETs are easily realized by a high current selective destruction of metallic tubes. The excellent dispersity and nearly-defect-free quality of the SWNT channels make these devices also useful for nanoscale chemical and biological sensor applications.
Keywords
carbon nanotubes, field effect transistors, nanotube devices, nanotechnology
Subject Categories
Field-effect transistors, Nanotubes, Microelectromechanical systems
Disciplines
Electrical and Electronics | Nanoscience and Nanotechnology
Publisher
American Institute of Physics
Publication Date
1-19-2006
Rights Information
Copyright 2006
Rights Holder
American Institute of Physics
Permanent URL
Recommended Citation
Lastella, Sarah; Mallick, Govind; Woo, Raymond; Karna, Shashi P.; Rider, David A.; Manners, Ian; Jung, Yung-Joon; Ryu, Chang Y.; and Ajayan, Pulickel M., "Parallel arrays of individually addressable single-walled carbon nanotube field-effect transistors" (2006). Center for High-Rate Nanomanufacturing Publications. Paper 12. http://hdl.handle.net/2047/d20000923
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Notes
Originally published in Journal of Applied Physics, v.99, 024302 (2006); doi:10.1063/1.2161820