Abstract

High-throughput field-effect transistors (FETs) containing over 300 disentangled, high-purity chemical-vapor-deposition-grown single-walled carbon nanotube (SWNT) channels have been fabricated in a three-step process that creates more than 160 individually addressable devices on a single silicon chip. This scheme gives a 96% device yield with output currents averaging 5.4 mA and reaching up to 17 mA at a 300 mV bias. Entirely semiconducting FETs are easily realized by a high current selective destruction of metallic tubes. The excellent dispersity and nearly-defect-free quality of the SWNT channels make these devices also useful for nanoscale chemical and biological sensor applications.

Notes

Originally published in Journal of Applied Physics, v.99, 024302 (2006); doi:10.1063/1.2161820

Keywords

carbon nanotubes, field effect transistors, nanotube devices, nanotechnology

Subject Categories

Field-effect transistors, Nanotubes, Microelectromechanical systems

Disciplines

Electrical and Electronics | Nanoscience and Nanotechnology

Publisher

American Institute of Physics

Publication Date

1-19-2006

Rights Information

Copyright 2006

Rights Holder

American Institute of Physics

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