Abstract
Magnesium oxide (111) was grown epitaxially on hexagonal silicon carbide (H-SiC) (0001) substrates at low temperatures by molecular beam epitaxy and a remote oxygen plasma source. The films were characterized by reflection high-energy electron diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscopy. Crystal structure, morphology, and growth rate of the magnesium oxide (MgO) films were found to be dependent on the magnesium flux, indicating a magnesium adsorption controlled growth mechanism. The single crystalline MgO thin films had an epitaxial relationship where MgO (111) 6H-SiC (0001) and were stable in both air and 10⁻⁹ Torr up to 1023 K.
Keywords
complex oxides, molecular beam epitaxy
Subject Categories
Thin films, Magnesium oxide, Silicon carbide, Molecular beam epitaxy
Disciplines
Chemical Engineering
Publisher
American Institute of Physics
Publication Date
1-2007
Rights Information
Copyright 2007
Rights Holder
American Institute of Physics
Permanent URL
Recommended Citation
Goodrich, Trevor L.; Parisi, J.; Cai, Zhuhua; and Ziemer, Katherine S., "Low temperature growth of crystalline magnesium oxide on hexagonal silicon carbide (0001) by molecular beam epitaxy" (2007). Chemical Engineering Faculty Publications. Paper 6. http://hdl.handle.net/2047/d20000711
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Notes
Originally published in Applied Physics Letters, vol.90, no.4, January 2007. doi: 10.1063/1.2436636