Abstract

Magnesium oxide (111) was grown epitaxially on hexagonal silicon carbide (H-SiC) (0001) substrates at low temperatures by molecular beam epitaxy and a remote oxygen plasma source. The films were characterized by reflection high-energy electron diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and atomic force microscopy. Crystal structure, morphology, and growth rate of the magnesium oxide (MgO) films were found to be dependent on the magnesium flux, indicating a magnesium adsorption controlled growth mechanism. The single crystalline MgO thin films had an epitaxial relationship where MgO (111) 6H-SiC (0001) and were stable in both air and 10⁻⁹ Torr up to 1023 K.

Notes

Originally published in Applied Physics Letters, vol.90, no.4, January 2007. doi: 10.1063/1.2436636

Keywords

complex oxides, molecular beam epitaxy

Subject Categories

Thin films, Magnesium oxide, Silicon carbide, Molecular beam epitaxy

Disciplines

Chemical Engineering

Publisher

American Institute of Physics

Publication Date

1-2007

Rights Information

Copyright 2007

Rights Holder

American Institute of Physics

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