Abstract

Barium hexaferrite (BaM) films were deposited on 10 nm MgO (111) films on 6H silicon carbide (0001) substrates by pulsed laser deposition from a homogeneous BaFe₁₂O₁₉ target. The MgO layer, deposited by molecular beam epitaxy, alleviated lattice mismatch and interdiffusion between film and substrate. X-ray diffraction showed strong crystallographic alignment while pole figures exhibited reflections consistent with epitaxial growth. After optimized annealing, these BaM films have a perpendicular magnetic anisotropy field of 16 900 Oe, a magnetization (as 4πs) of 4.4 kG, and a ferromagnetic resonance peak-to-peak derivative linewidth at 53 GHz of 96 Oe, thus demonstrating sufficient properties for microwave device applications.

Notes

Originally published in Applied Physics Letters, vol.91, no.18, Oct. 2007. doi: 10.1063/1.2794011

Keywords

ferromagnetic resonance, molecular beam epitaxy

Subject Categories

Ferrites (Magnetic materials)

Disciplines

Chemical Engineering | Electrical and Computer Engineering

Publisher

American Institute of Physics

Publication Date

10-2007

Rights Information

Copyright 2007

Rights Holder

American Institute of Physics

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