Abstract
Barium hexaferrite (BaM) films were deposited on 10 nm MgO (111) films on 6H silicon carbide (0001) substrates by pulsed laser deposition from a homogeneous BaFe₁₂O₁₉ target. The MgO layer, deposited by molecular beam epitaxy, alleviated lattice mismatch and interdiffusion between film and substrate. X-ray diffraction showed strong crystallographic alignment while pole figures exhibited reflections consistent with epitaxial growth. After optimized annealing, these BaM films have a perpendicular magnetic anisotropy field of 16 900 Oe, a magnetization (as 4πs) of 4.4 kG, and a ferromagnetic resonance peak-to-peak derivative linewidth at 53 GHz of 96 Oe, thus demonstrating sufficient properties for microwave device applications.
Keywords
ferromagnetic resonance, molecular beam epitaxy
Subject Categories
Ferrites (Magnetic materials)
Disciplines
Chemical Engineering | Electrical and Computer Engineering
Publisher
American Institute of Physics
Publication Date
10-2007
Rights Information
Copyright 2007
Rights Holder
American Institute of Physics
Permanent URL
Recommended Citation
Chen, Zhaohui; Yang, Aria Fan; Geiler, Anton; Harris (1962-), Vincent Girard; Vittoria, C.; Ohodnicki, Paul R.; Goh, K. Y.; McHenry, Michael E.; Cai, Zhuhua; Goodrich, Trevor L.; and Ziemer, Katherine S., "Epitaxial growth of M-type Ba-hexaferrite films on MgO (111) || SiC (0001) with low ferromagnetic resonance linewidths" (2007). Chemical Engineering Faculty Publications. Paper 4. http://hdl.handle.net/2047/d20000709
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Notes
Originally published in Applied Physics Letters, vol.91, no.18, Oct. 2007. doi: 10.1063/1.2794011