Abstract

M-type barium hexaferrite films were processed by pulsed laser deposition on single-crystal 6-H silicon carbide substrates. MgO buffer and barrier layers were introduced to improve the film quality. Samples were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, X-ray diffraction, vibrating sample magnetometry, and ferromagnetic resonance (FMR). X-ray θ − 2θ diffraction measurements indicated a strong (0, 0, 2n) crystallographic alignment. The magnetization of the BaM film is comparable to bulk values (4πMs ∼ 4320 G). A derivative power FMR linewidth of 500 Oe was measured at 55 GHz for the as-deposited films. This paper explores a potential next generation of microwave and millimeter-wave monolithic integrated circuit technology based upon a wide band-gap semiconducting material.

Notes

Originally published in IEEE Transactions on Magnetics, vol.42, no.10, pp.2855-2857, Oct. 2006. doi: 10.1109/TMAG.2006.879883

Keywords

Ba-hexaferrite, films, silicon carbide

Subject Categories

Ferrites (Magnetic materials)

Disciplines

Chemical Engineering | Electrical and Computer Engineering

Publisher

IEEE

Publication Date

10-2006

Rights Information

© 2006 Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.

Rights Holder

Institute of Electrical and Electronics Engineers

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