M-type barium hexaferrite films were processed by pulsed laser deposition on single-crystal 6-H silicon carbide substrates. MgO buffer and barrier layers were introduced to improve the film quality. Samples were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, X-ray diffraction, vibrating sample magnetometry, and ferromagnetic resonance (FMR). X-ray θ − 2θ diffraction measurements indicated a strong (0, 0, 2n) crystallographic alignment. The magnetization of the BaM film is comparable to bulk values (4πMs ∼ 4320 G). A derivative power FMR linewidth of 500 Oe was measured at 55 GHz for the as-deposited films. This paper explores a potential next generation of microwave and millimeter-wave monolithic integrated circuit technology based upon a wide band-gap semiconducting material.


Originally published in IEEE Transactions on Magnetics, vol.42, no.10, pp.2855-2857, Oct. 2006. doi: 10.1109/TMAG.2006.879883


Ba-hexaferrite, films, silicon carbide

Subject Categories

Ferrites (Magnetic materials)


Chemical Engineering | Electrical and Computer Engineering



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Institute of Electrical and Electronics Engineers

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