M-type barium hexaferrite films were processed by pulsed laser deposition on single-crystal 6-H silicon carbide substrates. MgO buffer and barrier layers were introduced to improve the film quality. Samples were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, X-ray diffraction, vibrating sample magnetometry, and ferromagnetic resonance (FMR). X-ray θ − 2θ diffraction measurements indicated a strong (0, 0, 2n) crystallographic alignment. The magnetization of the BaM film is comparable to bulk values (4πMs ∼ 4320 G). A derivative power FMR linewidth of 500 Oe was measured at 55 GHz for the as-deposited films. This paper explores a potential next generation of microwave and millimeter-wave monolithic integrated circuit technology based upon a wide band-gap semiconducting material.
Ba-hexaferrite, films, silicon carbide
Ferrites (Magnetic materials)
Chemical Engineering | Electrical and Computer Engineering
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Institute of Electrical and Electronics Engineers
Chen, Zhaohui; Yang, Aria Fan; Cai, Zhuhua; Yoon, Soack Dae; Ziemer, Katherine S.; Vittoria, C.; and Harris (1962-), Vincent Girard, "Structure and magnetism of Ba-Hexaferrite films grown on single crystal 6-H SiC with graduated interfacial MgO buffer layers" (2006). Chemical Engineering Faculty Publications. Paper 1. http://hdl.handle.net/2047/d20000700
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